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Dopants and Impurities in Semiconducting Nanowires
July 6, 2009 to July 8, 2009
Location : CECAM-HQ-EPFL, Lausanne, Switzerland
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- Doping strategies for silicon nanowires: ion implantation, diffusion and co-doping during chemical vapour deposition (CVD)
Silke Christiansen, S.H. Christiansen1,2, V. Sivakov1, G. Brönstrup1, Th. Stelzner1, R. Niepelt3, Ch. Borschel3, C. Ronning3, S. Hoffmann4, J. Michler4 - Doping deactivation and doping limits in silicon nanowires
Mikael Björk, H. Schmid, J. Knoch, H. Ghoneim, K. Moselund, S. Karg, W. Riess, and H. Riel - Stability and deactivation of dopant levels in silicon nanowires
Kee Joo Chang, B. Ryu1, W.-J. Lee1, and C.-Y. Moon - Dopants in Si nanowires: hybrid functional calculations
Adam Gali, R. Rurali, B. Aradi, and Th. Frauenheim - On the ab initio calculation of the binding energies of impurities
Yann-Michel Niquet, C. Delerue - Metal Alloy Catalyzed Growth of Si Nanowires
Suneel Kodambaka, J. Tersoff, C.-Y. Wen, M.C. Reuter, E.A. Stach, and F.M. Ross - Surface Passivation and Doping of Silicon and Germanium Nanowires Grown in Solution
Brian A. Korgel, V. Holmberg, R. N. Patel, and A. T. Heitsch - Structural stability, electronic properties and quantum conductivity of silicon nanowires
Antonios Andriotis, II. Ponomareva, M. Menon, and E. Richter - Semiconductor nanowire heterostructures: Strain distributions and electronic properties
Hongqi Xu - Dopant mapping and correlated functional imaging of semiconductor nanowires
Lincoln J. Lauhon - Functionalization of silicon nanowires by magnetic and non-magnetic dopant atoms
Engin Durgun, D. Cakir, N. Akman and S. Ciraci - Quasi-particles and Excitons in Si nanowires: effect of doping and surface termination
Maurizia Palummo, M. Amato, F. Iori, R. Del Sole, and S.Ossicini - Transport through a single atom in a nanowire MOSFET: from single-atom spectroscopy via lifetime enhanced triplet transport to Kondo physics
Sven Rogge - Impurity scattering in semiconductor nanowires
Martin Persson, Y. M. Niquet, M. Diarra, and C. Delerue - Pre- and post-growth doping of silicon nanowires
Alan Colli, A. C. Ferrari - Raman characterization of p-type impurities in individual silicon and silicon germanium nanowires
Minoru Fujii - Phonons in freestanding Si, Ge, and Si-Ge nanowires
Bart Partoens, H. Peelaers and F.M. Peeters - Anisotropic intravalley electron-phonon coupling in Si nanowires
Felipe Murphy Armando, G. Fagas and J. Greer - Precursor evaluation for in situ InP nanowire doping
Magnus T Borgstrom, Jesper Wallentin, Peter Wickert, Knut Deppert, Lars Samuelson
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